Specific Applications Surface Metrology

Through Silicon Via (TSV) and deep trench metrology:
Multiple technologies enable measurement of TSV and deep trench features from both front and back sides of the subject wafers. Non destructive mapping of TSV and trench uniformity is done across the entire wafer.

Membrane Thickness:
Non destructive measurement. Automated positioning of membrane for accurate and repetitive measurement.

Roughness Measurement:
Wafer surface roughness of various materials is measured using non contact WL confocal technology (optical stylus) associated with our powerful HISCAN process and 3D visualization technology.

Bump dimensions

Surface structures:
High definition scanning of small structures on the surface of the wafer. Submicron resolution employing a non contact optical stylus.